Abstract
Ferroelectric single crystalline NaNO2-layers are grown from the melt onto Si-FET substrates. The pyroelectric signal appearing across the NaNO2-Layer upon a temperature change of the NaNO2 is observed to induce a change in conductance of the source-drain channel in the adjacent Si-FET. The deposition of the NaNO2-layer on the Si-FET constitutes the integration of the pyroelectric NaNO2 radiation sensor with an impedance transformer. This appears as an important step towards the realization of a pyroelectric sensor array integrated into circuits on a Si-substrate for processing the sensor signals.
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