Abstract
Static and dynamic domain behavior of ferroelectric fluoride BaMgF4 single crystal was investigated using high-resolution piezoresponse force microscopy. High domain wall anisotropy was found in the as-grown BaMgF4 crystal. Antiparallel domain wall strain phenomena due to defects across the domain boundary were directly observed. The lateral domain growth in the inhomogeneous AFM tip field revealed the activation mechanism of the domain wall motion.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
