Abstract
AbstractThe ferroelectric domain wall thickness of a fluoride BaMgF4 single crystal was investigated by piezoresponse force microscopy. It was found that the domain wall thickness shows a strong spatial variation in the as‐grown crystal and the polarization reversal process. The original wall thickness is greater (about two to seven times) than that switched by the tip fields of the atomic force microscope. A significantly narrower domain wall was obtained in the higher tip‐field. The trapped defects at the domain wall play an important role in the spatial variation of the polarization width of 180° domain wall in the BaMgF4 single crystal. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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