Abstract
Double perovskite Bi2NiMnO6 (BNMO) thin films grown on p-Si (100) substrates with LaNiO3 (LNO) buffer layers were fabricated using chemical solution deposition. The crystal structure, surface topography, surface chemical state, ferroelectric, and current-voltage characteristics of BNMO thin films were investigated. The results show that the nanocrystalline BNMO thin films on p-Si substrates without and with LNO buffer layer are monoclinic phase, which have antiferroelectric-like properties. The composition and chemical state of BNMO thin films were characterized by X-ray photoelectron spectroscopy. In the whole electrical property testing process, when the BNMO/p-Si heterojunction changed into a BNMO/LNO/p-Si heterojunction, the diode behavior of a single diode changing into two tail to tail diodes was observed. The conduction mechanism and temperature stability were also discussed.
Highlights
In the past few decades, electronic devices prepared using a semiconductor have become an important research project in the field of materials science [1,2,3,4]
Bi2NiMnO6 has been widely studied as a multiferroic material
Low temperature ferroelectric properties in pulsed laser-deposition drive Bi2NiMnO6 thin films on (001)-oriented SrTiO3 single crystal substrates were reported by Sakai et al [8]
Summary
In the past few decades, electronic devices prepared using a semiconductor have become an important research project in the field of materials science [1,2,3,4]. The ferromagnetic and ferroelectric Bi2NiMnO6 was successfully prepared at 6 GPa as reported by Azuma et al [7]. Low temperature (about 100 K) ferroelectric properties in pulsed laser-deposition drive Bi2NiMnO6 thin films on (001)-oriented SrTiO3 single crystal substrates were reported by Sakai et al [8]. The phase transition temperature of epitaxial Bi2NiMnO6 thin films affected by single crystal substrates was studied using Raman spectroscopy [9].
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