Abstract
Integration of oxides onto base metal substrates offers great advantages in cost and weight reduction, device miniaturization, and flexibility in packaging. In this work, we report the deposition of dielectric Pb0.92La0.08Zr0.52Ti0.48O3−δ (PLZT 8/52/48) films on aluminum foils by an in-air crystallization process. Film-on-foil structures with and without conductive oxide LaNiO3 (LNO) buffer layer between PLZT film and aluminum foil were tested. Utilization of LNO buffer layer dramatically improved the dielectric and ferroelectric properties of the overlying PLZT compared with those for films deposited directly on aluminum. The improvements in electrical properties were attributed to the suppression of cubic non-ferroelectric layer at the metal/dielectric interface by LNO buffer layer. This work can be extended to the integration of other functional oxide materials with light, conductive, and inexpensive aluminum substrates for a broad range of applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
