Abstract
Scaling up the film thickness of HfO2-based ferroelectrics is an important factor leading to their potential application in piezoelectric devices. In this paper, we report the ferroelectric and piezoelectric properties of 100 nm-thick 0.1CeO2-0.9HfO2 films, epitaxially grown on (001) indium-tin-oxide//(001)yttria-stabilized zirconia substrates. The crystal structure was investigated using x-ray diffraction and scanning transmission electron microscopy (STEM). These analyses revealed that the polar orthorhombic phase was stabilized, even at a thickness of 100 nm, whereas the formation of a nonpolar monoclinic phase was suppressed. In addition, the elemental mappings obtained by STEM–energy dispersive x-ray spectroscopy revealed that the film was compositionally uniform across its thickness. The chemical state of Ce in the polar orthorhombic domain was investigated using STEM–electron energy loss spectroscopy, which revealed the coexistence of Ce4+ and Ce3+. In addition, pinched polarization-electric field loops were observed, and their shapes were found to remain unaltered even after 109 electric field cycles. The strain-electric field curves originating from ferroelectricity were observed before and after the electric field cycling, and the high-field observed strain, Smax/Emax, was found to be approximately 7.2 pm/V. These results demonstrate that thicker CeO2-HfO2 ferroelectric films are promising candidates for use as piezoelectric materials.
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