Abstract
Compared to the bulk piezoelectric materials counterpart, piezoelectric thin films (PTFs) possess advantages of smaller size, lower power consumption, better sensitivity, and have broad application in advanced micro-electro-mechanical system (MEMS) devices. However, the performance of MEMS transducers and actuators are largely limited by PTFs piezoelectric properties. In this review, we focus on understanding structure-property relationship of vapor deposited PTFs, with emphasis on the effect of strain energy and electrostatic energy in thin films, especially, energy relaxation induced misfit dislocation and ferroelectric (FS) and ferroelastic (FC) domain formation mechanisms. We then discuss the microstructure of these domains and their influential mechanisms on piezoelectric properties, as well as the domain engineering strategies (i.e., internal and external stimuli). This review will motivate further experimental, theoretical, and simulation studies on FS and FC domain engineering in PTFs.
Highlights
With the development of science and technology, electronic devices and optoelectronic devices are moving towards miniaturization, integration, and intelligence
Components made of traditional bulk piezoelectric materials have problems such as large size, high power consumption, high cost, and limited operating frequency, while microelectro-mechanical system (MEMS) devices using piezoelectric thin films (PTFs) have the advantages of small size, low power consumption, and great sensitivity [1,2,3,4,5]
PTFs are quite different compared to bulk piezoelectric materials, because they are clamped by the substrate and produce mechanical and electrical boundary conditions
Summary
With the development of science and technology, electronic devices and optoelectronic devices are moving towards miniaturization, integration, and intelligence. Piezoelectric properties mainly originate from piezoelectric response of domain characteristics, such as domain volume fraction, domain size and domain wall/interface density, and mobility [26,27,28,29]. Domain wall/interface density and influence mobility switching [34]. PTFs, and found thatPTFs, the motion of the FSthe domain wall could domain could enhance the piezoelectric response. PTFs with high-density mobile domain wallsmobile may adapt to the change the applied electricofor stress fieldelectric [39], and with high-density domain walls mayof adapt to the change the applied or thereby generate a strong piezoelectric response. Controlling of domain structures in stress field [39], and thereby generate a strong piezoelectric response.
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