Abstract
Ferroelectric samples Sr1−xBaxTiO3 (BST), where x = 0, 0.2, 0.4, 0.6, 0.8 and 1, were prepared using the tartrate precursor method and annealed at 1200 °C for 2 h. X-ray diffraction, “XRD”, pattern analysis verified the structure phase. The crystallite size of the SrTiO3 phase was calculated to be 83.6 nm, and for the TiO2 phase it was 72.25 nm. The TEM images showed that the crystallites were agglomerated, due to their nanosize nature. The AC resistivity was measured as temperature dependence with different frequencies 1 kHz and 10 kHz. The resistivity was decreased by raising the frequency. The dielectric properties were measured as the temperature dependence at two frequencies, 1 kHz and 10 kHz. The maximum amount of dielectric constant corresponded to the Curie temperature and the transformation from ferroelectric to paraelectric at 1 kHz was sharp at 10 kHz. Polarization–electric field hysteresis loops for BST samples were measured using a Sawer–Tawer modified circuit. It was shown that the polarization decreased with increasing temperature for all samples.
Highlights
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations
Ferroelectric materials are arduous elements used in piezoelectric equipment and sequenced missions, such as sensing and actuation
The dependence of ferroelectric characteristics on grain size is due to its electrical properties [1]
Summary
Ferroelectric materials are arduous elements used in piezoelectric equipment and sequenced missions, such as sensing and actuation. They have featured behaviors, such as switchable macroscopic polarization, that have attracted prolonged interest for purposes in nonvolatile memories, micro-electromechanical systems, nonlinear optics and sensors. In nano ranges, the ferroelectric structure has demonstrated completely different features from materials with a bulk structure. BaSrTiO3 (BST) is the most popular ferroelectric oxide in the perovskite ABO3 structure. Convenient insulating BST, which has a high dielectric constant, is suitable for use in capacitors and is preferred in several devices, such as high-speed random-access memories, dynamic random-access memories, piezoelectric transducers, wireless communication devices and pyroelectric elements [1,2]
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
