Abstract
Epitaxial growth of Bi1.5–xZn0.92–yNb1.5O6.92–1.5x–y (BZN) thin films was achieved on (100)pc LaAlO3 substrate by pulsed laser deposition (PLD) and by chemical solution deposition based on Pechini process. Effect of bismuth and zinc deficiency on the BZN thin films obtained by PLD was discussed, in relation with the starting target composition. Dielectric permittivity and bandgap values were determined from electrical and spectroscopic ellipsometry measurements performed on randomly oriented films grown on Pt/Si substrate. BZN thin films obtained by PLD exhibit, at 100kHz, a dielectric constant of εr=203 and quite low dielectric losses of tanδ=5×10−2. Epitaxial ferroelectric−dielectric KTa0.65Nb0.35O3 (KTN)−Bi1.5–xZn0.92–yNb1.5O6.92–1.5x–y (KTN on BZN and BZN on KTN) bilayers were obtained by PLD on (100)pc LaAlO3 with the insertion of a suitable buffer layer of KNbO3 in the case of KTN on BZN. Such multilayer heterostructures with an epitaxial growth control of each layer are promising candidates for potential integration in microwave devices.
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