Abstract
Copper-doped SrTiO/sub 3/ (STO) powders were processed by conventional bulk preparation techniques to establish solubility limits of Cu in STO. The maximum solubility of Cu in STO was identified to be /spl sim/1%. Epitaxial Cu-doped SrTiO/sub 3/ (STO) buffer layers were then prepared by pulsed laser deposition (PLD) and chemical solution deposition (CSD) on ion-beam-assisted deposition (IBAD) magnesium oxide (MgO) flexible metallic textured tapes. Transmission electron microscopy (TEM) analysis of the /spl sim/100 nm thick buffer layer deposited by PLD showed a smooth Cu-doped STO/MgO interface. Films deposited by CSD had an average film thickness of 30 nm and exhibited growth by heterogeneous nucleation with no secondary reaction phases. YBa/sub 2/Cu/sub 3/O/sub 7-/spl part// (YBCO) films were deposited onto the Cu-doped STO buffer layers by PLD.
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