Abstract
We have succeeded in growing a high-quality single crystal of UCu 2 Si 2 with a tetragonal structure by the Sn-flux method and measured the de Haas–van Alphen effect. UCu 2 Si 2 orders antiferromagnetically below T N =106 K and follows a successive ferromagnetic ordering at T C =100 K. Several de Haas–van Alphen branches are observed in the ferromagnetic state, ranging from 5×10 6 to 7×10 7 Oe. The corresponding cyclotron effective masses are moderately large, ranging from 1.4 to 4.2 m 0 , consistent with the electronic specific heat coefficient γ=20 mJ/(K 2 ·mol). These experimental results are approximately explained by the 5 f -itinerant spin- and orbital-polarized energy band model.
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