Abstract
The Fermi liquid model of itinerant electron magnetism is applied to the calculation of the magnetic susceptibility of narrow gap semiconductors. The anomalous temperature dependence of susceptibility as has been observed for FeSi is obtained. It is shown that the Fermi liquid effect which gives rise to the susceptibility maximum in metals, also plays a crucial role in the susceptibility maximum in narrow gap systems.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
