Abstract
Our investigation of electronic transport in Hg 1− x Cd x Te and InSb shows a linear-in-temperature correction to the resistance for T < 10 K, Δ R R ∼ 10 −3 , which vanishes with the applied magnetic field as — B 1 2 , characteristic of weak localization in 3-D systems. The data have been fit to 3D weak localization theory in order to extract the inelastic relaxation time, τ i , vs T. The results show that τ i varies ∼ T −2 for InSb and Hg 1− x Cd x Te, and confirm the similarity of the low field transport properties in these narrow gap systems.
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