Fermi-Level Effects on Extended Defect Evolution in Si+ and P+ Implanted In0.53Ga0.47As

Abstract

The evolution of implant damage in InGaAs is studied for electrically active Si+ and isoelectronic P+ implants. Extrinsic loops formed by excess interstitials are shown to be less stable upon annealing for n-type Si+ implants relative to isoelectronic P+ implants. Damage created by P+ implants into heavily n-doped InGaAs is also shown to be less stable than damage created by P+ implants into unintentionally doped InGaAs indicating that the background doping concentration can significantly effect the evolution of implant damage upon annealing. Previous results have suggested that the electrical activation and diffusion behavior of n-type dopants, like Si in InGaAs, may be strongly influenced by vacancy concentration. TEM results in this study also suggest that heavy n-type doping in InGaAs results in the formation of a large population of vacancy defects that enhance the dissolution or inhibit formation of interstitial loops.