Abstract

Fermi-level depinning in germanium (Ge) through nitrogen (N2) plasma treatment is demonstrated. The Ge surface was exposed to N2 plasma for 1 min without heat treatment, resulting in the formation of 2.5 nm-thick GeO x N y layer with uniform surface and interface morphologies. Ohmic and Schottky behaviours were obtained for Al contacts to N2 plasma-treated n- and p-type Ge with barrier heights of 0.09 and 0.40 eV, respectively. Fermi-level depinning could be attributed to the reduction in interface states caused by the passivation of Ge surface by highly uniform GeO x N y layer.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.