Abstract
We have studied the electrical and magnetic transport properties of tunneling device with FePt magnetic quantum dots. The FePt nanoparticles with a diameter of 8∼15 ㎚ were embedded in a SiO₂ layer through thermal annealing process at temperature of 800℃ in N₂ gas ambient. The electrical properties of the tunneling device were characterized by current-voltage (Ⅰ-Ⅴ) measurements under the perpendicular magnetic fields at various temperatures. The nonlinear Ⅰ-Ⅴ curves appeared at 20 K, and then it was explained as a conductance blockade by the electron hopping model and tunneling effect through the quantum dots. It was measured also that the negative magneto-resistance ratio increased about 26.2% as increasing external magnetic field up to 9,000 G without regard for an applied electric voltage.
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