Abstract
A femtosecond, tunable color center laser was used to conduct degenerate pump-probe transmission spectroscopy of thin film low temperature grown molecular beam epitaxy In0.53Ga0.47As samples. Low temperature molecular beam epitaxy In0.53Ga0.47As exhibits a growth-temperature dependent femtosecond optical response when probed near the conduction band edge. Below Tg=250°C, the optical response time of the material is subpicosecond in duration, and we observed induced absorption, which we suggest is due to the formation of a quasi-“three-level system”.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
