Abstract
Diamond is well known for its many remarkable mechanical, thermal, electric and optical properties. Among its remarkable characteristics, it also presents interesting nonlinear optical effects, thus being a highly desired material for many photonic devices. Therefore, femtosecond laser micromachining can be used as the processing method of such devices due to its high micron/sub-micron resolution. Thus, in this paper, the incubation effect (damage threshold fluence as a function of the number of applied fs-pulses) is studied at 1030, 515 and 343 nm with 216 fs pulses using the zero damage method. By implementing the exponential defect model, the incubation parameter was determined to be (0.14 ± 0.03) at 1030 nm, (0.3 ± 0.1) at 515 nm, and (0.13 ± 0.04) at 343 nm, which indicates that at 515 nm, fewer fs-pulses are necessary to reach the minimum damage fluence value. In addition, a theoretical model of the electron density formed by a single fs-pulse was used to determine the main light-absorption mechanism at 343 nm. Consequently, this work adds to the knowledge of fs-laser micromachining of CVD diamond from near IR to UV.
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