Abstract
Excited carrier dynamics in GaAs and Al.2Ga.8As are investigated using femtosecond pump and continuum probe techniques. Absorption saturation measurements provide evidence for transient spectral hole burning due to split-off as well as heavy and light hole valence to conduction band transitions. The initial nonthermal carrier distribution thermalizes and assumes abroad energy distribution on a femtosecond time scale.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have