Abstract
Through comprehensive experimental measurements and TCAD simulation, it is shown that the avalanche ruggedness of SiC MPS & JBS diodes outperforms that of closely rated Silicon PiN diodes taking advantage of the wide-bandgap properties of SiC which leads to a high ionization and activation energy given the strong covalent bonds. Although the MPS diode structure favours a high reverse blocking voltage with small leakage current and a high current conduction, the localise current crowding caused by the multiple P+ implanted region leads to the avalanche breakdown at lower load currents than the SiC JBS diode. The results of Silvaco TCAD Finite Element modellings have a good agreement with the experimental measurements, indicating that SiC JBS diode can withstand the high junction temperature induced by avalanche in line with the calculated avalanche energy.
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