Abstract
The results of the study of the effect of strained SiGe layers on the critical thickness of two-dimensional growth of Ge layer in different SiGe/Si(001) structures are presented. A significant influence of buried strained SiGe layer on the growth of Ge has been found out, which remains considerable even for SiGe layers capped by unstrained Si layer of thickness up to 3.5 nm. The experimental results are well described by the proposed model, where obtained features are explained by means of introducing a phenomenological parameter called “effective decay length” of the strain energy accumulated in the structure.
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