Abstract

The structure and dielectric properties of thin lead zirconate titanate Pb(Zr,Ti)O3 films grown ex situ on a silicon substrate are studied using various methods (X-ray analysis, raster electron microscopy, atomic-force microscopy, optical microscopy, and dielectric measurements). It is shown that, upon increase in the crystallization temperature, the growth texture of the films changes, leading to a change of their dielectric parameters.

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