Abstract
Highly (100)-oriented Pb(Zr,Ti)O3 film was prepared on Pt/Ti/SiO2/Si by sol–gel route. An alternating electric field normal to the film surface was in situ applied to the as-crystallized Pb(Zr,Ti)O3 film during the reannealing treatment, and its effect on the residual strain of the film was investigated by X-ray diffraction. X-ray diffraction measurement shows that the reannealing treatment in alternating electric field has an obvious influence on the reduction of residual strain in the Pb(Zr,Ti)O3 film and platinized silicon substrate. With increase of reannealing treatment temperature in alternating electric field, the reduction of strain in the film increases.
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