Abstract
The effect of single crystalline CdTe, CdSe, CdS substrates normalizing annealing on their optical properties was investigated, and the surface nanostructure formation was determined by the study of optical transmission spectra, photoluminescence and atomic force microscopy (AFM) topograms. Possibility obtaining of intense luminescence in the border region, formed by interband recombination and transitions due to size quantization of the charge carrier energy, is determined.
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