Abstract
It has been experimentally established that the time of switching by triangular pulses in Ti—TiN–ZrO2(Y)–Zr–Au memristor structures from the state of low resistance to the state of high resistance is inversely proportional to the voltage rise rate, i.e., the bias current through the memristor structure. A mechanism for the influence of a bias current on the switching time of the structure has been proposed.
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