Abstract
Abstract The electrical and photoelectric properties of GaS(Yb) monocrystal have been studied in the range of 100–300 K. It has been established that as the partial compensation of structure defects (VGa) occurs due to the inclusion of ytterbium dopant, the electroconductivity of GaS monocrystal decreases. The simultaneously occurrence of substitution (YbGa) of cation vacancy – VYb and Yb-Ga due to the formation of acceptor and donor type two charged local centers during the doping, leads to a self-compensating process. As a result, the specific resistance of the crystal increases, and thermal activation and extinction processes are observed in the temperature dependence of photoconductivity.
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