Abstract
The temperature dependence of dielectric properties and photoluminescence (PL) of glass semiconductor SbSI is studied. According to measurements of the dielectric constant and polarization the first-order structural phase transition into the polar state (dipolar glass) is realized at T = 198 K. A complex spectrum of the found PL in the glass SbSI is related to two types of structural units. A wide radiation band, PL maximum location and large Stocks shift prove the existence of a strong electron-phonon interaction.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
