Abstract
In this communication, we focus on the optical properties of InAsSbP/InAsSb/InAsSbP single quantum well structures grown on InAs substrates using the metal-organic vapor phase epitaxy (MOVPE) technique. The obtained Fourier transformed photoluminescence spectra allowed us to perform an advanced analysis of the temperature evolution of the measured spectra, which revealed radiative recombination at room temperature in the mid-infrared spectral range (∼3.5 μm) associated with localized states in the quantum well. These results suggest that improvements in the quality of the InAsSbP/InAsSb heterointerfaces could open the way to new types of heterostructures based on nanoscale systems for the fabrication of cheap mid-infrared lasers and light-emitting diodes, which are demanded by the optical gas sensing market.
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