Abstract
The near-ultraviolet (UV) light emitting diodes (LED) using ultrathin InN/GaN quantum well (QW) are fabricated by metal organic vapor phase epitaxy. The x-ray diffraction measurement shows well-defined satellite peaks, which implies abrupt interfaces and good layer periodicity of the QWs. The electroluminescence only exhibits a near-UV emission centered at approximately 3.14–3.18 eV without other emission peaks even the common yellow luminescence, which further confirms the advantages of the near-UV LED especially the minimization of phase separation, interdiffusion, and defects in the QWs. The near-UV emission is found to be stable even under high pulsed injection-current in contrast to the conventional InGaN based LED. This behavior indicates effective avoidance of the redshift related to the many body effect as well as the blueshift induced by band filling effect, localized states in the barrier, and the quantum confined stark effect. The realization of the near-UV LED using the ultrathin InN/GaN QW would facilitate the application of near-UV solid-state lighting source.
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