Abstract
There has been investigated the capacitance of silicon micro pixel avalanche photodiodes (MAPD 3N) with deeply buried pixels under the effect of weak AC signal of different frequency (from 10 kHz to 1 MHz). A decreasing of the barrier capacitance with an increasing of AC signal frequency has been observed when small DC bias voltage (0-3 V) is applied to the structure. With the rise of voltage the observed dependence weakens and further saturates. It is established that capacity behavior like this within small voltage is referred to the peculiarity of MAPD structure under the investigation: presence of matrix of n + -regions between two epitaxial layers of p-type conductivity results in the appearance of some effective resistance between these layers connected in series with the measured capacity depending on AC signal frequency. The calculated values of ionized acceptor concentration from the slope of the dependence C -2 (Ubias) in epitaxial layer are: NA1 = (2.4 ±0.3)∙10 20 m -3 for Ubias up to 3 V, NA2 = (1.08±0.05)∙10 21 m -3 for Ubias from 3 to 10 V and NA3 = (2.13±0.27)∙ 10 21 m -3 for Ubias from 10 to 20 V respectively.
Highlights
Developed micropixel avalanche photodiodes (MAPD) [1,2,3,4], with a high gain (~ 105) and high efficiency of a single light quanta registering (40%), are widely used in modern devices
The manufacturing technology and the physical processes of the micropixel avalanche photodiodes with deeply buried pixels has been described earlier [4,5,6,7,8]
MAPD structure comprises silicon n-type substrate and two epitaxial layers of p-type conductivity have been grown on its surface
Summary
Developed micropixel avalanche photodiodes (MAPD) [1,2,3,4], with a high gain (~ 105) and high efficiency of a single light quanta registering (40%), are widely used in modern devices. The manufacturing technology and the physical processes of the micropixel avalanche photodiodes with deeply buried pixels has been described earlier [4,5,6,7,8]. A matrix of n+- areas of 2-5 microns has been arranged between two p-type epitaxial layers. In avalanche diodes with deeply buried pixels quenching of discharge occurs due to the fall of voltage in p-n junction below breakdown, by accumulating part of multiplied electrons in potential well (each micropixel contains potential well because of p-n+-p structure). The recovery of previous electric field in multiplication micro channels is taken place due to running off the accumulated charge to the substrate through a forward-biased p-n junction between the first epitaxial layer and the n+-- region
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