Abstract
A moire between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of the lattice spacing. We apply these phenomena to a compositionally graded SiGe thin film deposited onto a Si substrate by molecular beam epitaxy method. The results of the experiments and image analysis show the potential of this technique to analyze a slight change of the lattice spacing according to a compositional change.
Highlights
A slight change of lattice spacing around hetero-interfaces of crystalline materials has an important role for their properties in most of the cases in general
The incidental beam condition of the scanning transmission electron microscopy (STEM) must be very stable in order to record the STEM moiré
It is clear in this figure that the scanning direction of the STEM, which is always horizontal in the STEM images, is almost parallel to the {111} plane of the specimen
Summary
A slight change of lattice spacing around hetero-interfaces of crystalline materials has an important role for their properties in most of the cases in general. In a field of semiconductor devices, lattice strains due to hetero-structures are important to realize high-speed transistors and we have been studying them [1] [2] [3] [4] [5]. Transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) are useful to analyze this kind of local lattice spacing of crystals. TEM-based techniques such as high-resolution TEM/STEM images and nano-beam transmission electron diffraction techniques are not suitable for the wide range observation, for example, observation from the squared-micron order area. A very unique method to analyze lattice spacing has been reported by other researchers [6]-[12].
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