Abstract
Photocathode electron projection is an electron lithography technique that may be used to pattern semiconductors at the deep submicron level. Using a robust gold cathode, mask features in the range of 0.11–0.54 μm have been transferred to electron resist coated wafers with adequate depth of focus (≂5 μm) and large field of view (≂2 cm2). Low accelerating voltages ∼3 keV minimize proximity effects, and with a mask to wafer spacing of a few millimeters, the necessary magnetic field is ≂0.46 T.
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