Abstract
We report on feasibility of a re-oxidized nitrided oxide (RONO) as a charge-trapping medium for non-volatile memory. The RONO is in situ formed by initial oxidation in wet oxygen ambient followed by NO anneal, then re-oxidation in wet O 2 ambient, and has an “oxide/nitrogen-rich layer/oxide” structure. The nitrogen existing in the oxide bulk constitutes SiON bonding, and the nitrogen existing near the new formed Si–SiO 2 interface constitutes Si 2NO bonding. The SiON bonding due to the non-bonding site of nitrogen buried in the oxide is expected as a main bonding status important to the memory properties. MOS transistors with the RONO show the maximum memory window of 2.5 V and the memory retention of about three-years.
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