Abstract
Film deposition by means of a beam of sputtered particles was studied. The sputtered particles are ejected from a sputtering chamber and deposited on a substrate in another evacuated chamber. The method makes uses of the gettering effect of high-rate sputtering, together with a cold-wall effect that suppresses desorption of impure gases from chamber walls. The crystal structure and magnetic properties of Fe films thus deposited were studied. The films exhibit higher crystal growth, higher electrical conductivity, and lower coercivity than films deposited by a conventional RF diode sputtering system. These results suggest that, by further improvement of the system, the method may be applied to the production of various multi-element single-crystal films of high quality.
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