Abstract
Kinetics of structure and phase constitution of Fe/SiO2/Si(001) system under different conditions of deposition and annealing was considered. It was established that SiO2 layer is not destroyed during Fe deposition process over the temperature range from 20 to 650°C. As a result, the Fe films having different morphologies are formed on the oxide surface. Destruction of SiO2 layer occurs upon annealing on defect places of SiO2 film that results in the interaction of Fe atoms with the Si substrate and successive silicides formation. [DOI: 10.1380/ejssnt.2007.45]
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