Abstract
Cd 1 - x Fe x S and Cd 1 - x - y Fe x Zn y S thin films were grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on c - Al 2 O 3 substrates. The films fabricated at 360 ∘ C under an hydrogen pressure of 76 Torr had hexagonal structure with only one (0 0 0 2) diffraction peak. The samples with low doping content have sharp absorption edges. It is found that the absorption edge and the emission peak positions of the Cd 1 - x - y Fe x Zn y S film shift to high energy due to the Zn-doping. The band gap energy could be tuned in a wide range with the change of Zn content. The broadening of the Cd 1 - x - y Fe x Zn y S emission peak could be attributed to the alloy fluctuations and the shallow defect in the samples.
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