Abstract
We have grown Fe δ-doped (In,Fe)Sb thin films by low-temperature molecular beam epitaxy for magnetic-field sensors with ultrahigh Hall sensitivity. Magnetic circular dichroism spectroscopy measurements indicate intrinsic ferromagnetism in the Fe δ-doped (In,Fe)Sb layers. Although the Fe δ-doped (In,Fe)Sb thin films have lower Curie temperature than the Fe uniformly-doped (ln,Fe)Sb with the same average Fe concentration, their anomalous Hall effect is much stronger. The Hall sensitivity of the Fe δ-doped (In1−〈x〉,Fe〈x〉)Sb sample with an average Fe concentration 〈x〉 = 17% reaches 1522 Ω/T at room temperature, which is much higher than those of Fe uniformly-doped (In,Fe)Sb, (Ga,Fe)Sb, and commercial InSb Hall sensors.
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