Abstract
This paper presents a study on an integrated technology: Fully-Depleted-Silicon-On-Insulator (FDSOI) at a 28nm node. FDSOI results are compared to another technology: Complementary-Metal-Oxide-Semiconductor (CMOS) 350nm. The aim of this work was to demonstrate the advantages of using FDSOI technology in RF energy scavenging applications. Characteristics of transistors are pointed out and results showed an improved 22%-output voltage gain for a series rectifier and a 13%-output voltage gain for a Dickson charge pump in FDSOI technology compared to CMOS, for an input voltage and power of 0.5 V and 0 dBm respectively. Those results allowed to prove that FDSOI 28nm is a better technology choice for energy scavenging and low-power applications.
Highlights
Nowadays, microelectronic field aims to focus more and more on systems miniaturization as the reduction of power consumption without compromises on the required performances
The aim of this study was to compare two technologies and to point out the advantage to use the emergent technology FDSOI in integrated applications such as RFDC and DC-DC conversions applied to energy scavenging and low-power
The obtained output voltages of an RF rectifier and a Dickson charge pump structure [7] are discussed in section 3 and 4
Summary
Microelectronic field aims to focus more and more on systems miniaturization as the reduction of power consumption without compromises on the required performances. Based on these objectives, some studies have been realized on energy conversion applications in [1], [2] and [3]. The primary features and challenges of the FDSOI compared to CMOS has been described in literature as in [6] Based on these facts, the aim of this study was to compare two technologies and to point out the advantage to use the emergent technology FDSOI in integrated applications such as RFDC and DC-DC (charge pump) conversions applied to energy scavenging and low-power. The ultimate goal of this study was to demonstrate that FDSOI 28nm is a suitable technology for RF energy scavenging
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