Abstract
Thin film capacitors with excellent energy storage performances, thermal stability and fatigue endurance are strongly desired in modern electrical and electronic industry. Herein, we design and prepare lead-free 0.7Sr0.7Bi0.2TiO3-0.3BiFeO3- x%Mn (x = 0, 0.5, 1.5, 2, 3) thin films via sol-gel method. Mn ions of divalent valence combine with oxygen vacancies, forming defect complex, which results in marked decline in leakage current and obvious enhancement in breakdown strength. A high energy storage density ∼ 47.6 J cm−3 and good efficiency ∼ 65.68 % are simultaneously achieved in 2% Mn doped 0.7Sr0.7Bi0.2TiO3-0.3BiFeO3 thin film capacitor. Moreover, the 2% Mn-doped thin film exhibits excellent thermal stability in wide operating temperature range (35–115 °C) and strong fatigue endurance behaviors after 108 cycles. The above results demonstrate that 2% Mn-doped 0.7Sr0.7Bi0.2TiO3-0.3BiFeO3 thin film capacitor with superior energy storage performances is a potential candidate for electrostatic energy storage.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
