Abstract
The properties of modified remote microwave-activated etching of silicon (the E2MSi method), utilizing the ‘microwave memory effect’, are presented. In the method, prior to the etching process, the etchant was repeatedly microwave-treated in a closed-loop circulation system. It has been found that the etch rate of the (1 0 0) plane was higher than in standard procedures. The etchant continued the microwave activation for longer and the increase in the etch rate was greater than with a single-time activated etchant. The results of a simple and repeatable experiment (growth of NaCl crystals) confirmed the influence of the ‘microwave memory effect’ on aqueous solutions. The nature of the phenomena described is also discussed.
Published Version
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