Abstract

An electrically heated blackbody radiation source comprising thin metal film on a dielectric substrate and an integrating cavity was designed, fabricated, and experimentally studied at frequencies from 75 to 500 GHz. Analytical and numerical modeling were performed to optimize the emissivity, spectral uniformity, and modulation frequency of the radiation source with the spherical integrating cavity and thin film absorber. The blackbody emissivity (absorptivity) increased from 0.3 to 0.5 for the bare thin film on dielectric substrate, and up to 0.95 when it was placed inside the integrating cavity. The fabricated source mounted at the 0.5 K stage was used to measure the response time of a few microseconds and for sensitivity measurement down to 10−18 W/Hz1/2 of the superconductor–insulator–normal metal–insulator–superconductor (SINIS) detector at 100 mK.

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