Abstract

Colloidal quantum dots (CQDs) as photodetector materials have attracted much attention in recent years due to their tunable energy bands, low cost, and solution processability. However, their intrinsically low carrier mobility and three-dimensional (3D) confinement of charges are unsuitable for use in fast-response and highly sensitive photodetectors, hence greatly restricting their application in many fields. Currently, 3D topological insulators, such as bismuth telluride (Bi2Te3), have been employed in high-speed broadband photodetectors due to their narrow bulk bandgap, high carrier mobility, and strong light absorption. In this work, the advantages of topological insulators and CQDs were realized by developing a hybrid Bi2Te3/PbS CQDs photodetector that exhibited a maximum responsivity and detectivity of 18 A/W and 2.1 × 1011 Jones, respectively, with a rise time of 128 μs at 660 nm light illumination. The results indicate that such a photodetector has potential application in the field of fast-response and large-scale integrated optoelectronic devices.

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