Abstract
Two-dimensional (2D) topological insulators (TIs) are 2D semiconductors/insulators that distinguish themselves from ‘conventional’ 2D semiconductors/insulators (like monolayer hBN or MoS 2 ) by the presence of electronic states on their edges. These TI edge states traverse the bandgap and exhibit spin-momentum locking. The spin-momentum locking prohibits intra-edge scattering giving rise to efficient electronic transport. Electronic transport will proceed efficiently along the TI edge states as long as the Fermi level is positioned in the bandgap of the 2D TI. If the Fermi level in the 2D TI is close to or lies in the bulk conduction or valence band, scattering is no longer prohibited and can dramatically reduce the conductivity of the 2D TI. Gating a 2D TI enables the modulation of the Fermi level and subsequently the current, realizing a 2D TI field-effect transistor (FET) [1].
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