Abstract
The creation of metastable dangling-bond defects in hydrogenated amorphous silicon subjected to short, intense laser pulses is investigated. It is found that pulse excitation leads to an order-of-magnitude increase in the defect creation rate compared to continuous illumination with the same average photon flux and photon energy. This implies that metastable-defect formation depends superlinearly on the density of photoexcited carriers. The much larger defect creation rate in the case of pulse excitation allows us to clarify the origin of saturation effects in the metastable-defect density, that are important for an assesment of the long-term conversion efficiency of amorphous-silicon solar cells.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
