Abstract
We fabricated vertical metal–semiconductor–metal (MSM) detectors with Si/Si 1− x Ge x ( x=0.39 and 0.45) superlattices as active detector regions. An epitaxial buried CoSi 2 contact served as the bottom electrode and a Cr contact as the top electrode. The superlattices, grown by molecular beam epitaxy, showed vertically ordered SiGe islands. With the MSM detectors we obtained quantum efficiencies of 5% for the wavelength of 1.32 μm and 1% for 1.55 μm. Using a Ti:sapphire laser and an optical parametric oscillator which generates ultrafast pulses at IR wavelengths, the temporal response of the MSM detectors was measured. The detectors showed response times of 12 ps.
Published Version
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