Abstract
We have grown bulk-like GaN with a thickness up to 335 μm on 2″ sapphire substrates in a vertical HVPE reactor with a bottom-fed design. A very high growth rate of 250 μm/h is reached with high crystalline quality of the grown material. The low temperature PL spectra show the free A-exciton line at 3.483 eV and rather narrow I2 lines with FWHM of 1–2 meV indicating high crystalline quality and low doping concentration. This HVPE-GaN has the potential to provide lattice-matched and thermally-matched substrates for further epitaxial growth of high quality GaN with a low dislocation density for advanced heterostructure devices. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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