Abstract

The NH3gas sensing characteristics of vanadyl-phthalocyanine (VOPc) films in metal-insulator-semiconductor (MIS) hetero structures were investigated. The MIS device showed a rectification behavior and an increase in conductivity at the presence of NH3 gas. The response was very fast and reversible. The conductivity change observed for the MIS sensors was found to be originating from the change of the barrier height between the junctions.

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