Abstract
The influence of crystal defects on the performance of Metal Insulator Semiconductor (MIS) devices on (Hg,Cd)Te was investigated. It was found that the capacitance-voltage, conductance-voltage, and capacitance-time characteristics were degraded with increasing substructure density. For the case where the only crystal defects were dislocations the observed MIS device behavior as a function of dislocation density is consistent with a dislocation limited minority carrier lifetime.
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