Abstract
In this paper, we propose an analytical model using the suppression factor for fast evaluation of the high-frequency channel noise in nanoscale MOSFETs for radio frequency and mixed-signal applications. The derived suppression factor expression can accurately predict the channel noise for both long- and short-channel MOSFETs working in all regions of operations. It only depends on two major process parameters, and enables early delivery of the noise models before conducting complicated high-frequency noise measurements. The model is verified using the experimental data measured on both n- and p-type MOSFETs fabricated in the 40-nm CMOS technology from United Microelectronics Corporation.
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