Abstract
The computational procedure for a number of fast electrons generated by ion impact with a surface is proposed. The ionization of 2s and 2p atomic shells is shown to be the main source of fast electrons under proton interaction with a silicon surface. The number of fast electrons does not depend on the angle of ion incidence on a surface with a small number of reflected ions.
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Schedule a callMore From: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
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